Lateral current injection lasers and the integrated split-electrode laser modulator.
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Lateral current injection lasers and the integrated split-electrode laser modulator.

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Published by National Library of Canada in Ottawa .
Written in English


Book details:

Edition Notes

Thesis (M.A.Sc.) -- University of Toronto, 2000.

SeriesCanadian theses = -- Thèses canadiennes
The Physical Object
Pagination2 microfiches : negative. --
ID Numbers
Open LibraryOL20429020M
ISBN 100612534448

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Lateral Current Injection Lasers and the Integrated Split-Electrode Laser Modulator. By Han (henry Sun, Ottawaon Kaon, Ottawa On and Ki A On. Abstract. exclusive licence allowing the exclusive permettant à l Year: OAI identifier: oai: The most important requirement of current sources used for diode lasers is that they MUST BE FREE of electrical transients that can seriously damage the laser. CW narrow-stripe lasers require an injection current of about 20 to mA and have a forward voltage drop of about 2 :// We investigated the waveguide loss of lateral-current-injection (LCI) type GaInAsP/InP membrane lasers by adopting low-doped p-InP cap and side cladding :// A preliminary reliability test was performed for lateral-current-injection GaInAsP/InP membrane Distributed Feedback (DFB) lasers fabricated by multi-regrowth and adhesive wafer ://

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing Selection of parameters in laser-amplifier injection locking Author(s): Broad area semiconductor lasers with Gaussian-like current distribution Author(s):   Integrated Photo-supercapacitor Based on Bi-polar TiO2 Nanotube Arrays with Selective One-side P lasma-assisted Abstract: One-dimensional anodic titanium oxide (ATO) nanotube arrays hold great potential as electrode materials for both dye-sensitized   Web view. Because electro-absorption modulators are made by semiconductor materials, they can usually be monolithically integrated with semiconductor lasers, as illustrated in Figure In this case, the DFB laser section is driven by a constant injection current I C, thus producing a constant optical power. The EA section is separately controlled by   Femtosecond lasers have been proven to be a powerful tool for advanced materials processing on both the micro- and nanoscale. Compared with traditional laser processing techniques that use longer pulse or continuous wave lasers, femtosecond laser micromachining offers several key advantages due to its unique characteristics of ultrashort pulse width and extremely high peak ://

Free carrier injection in a modulator pn-junction results in a maximum laser blue-shift of +14GHz. Thermal effects in a similar structure yield a laser red-shift up to −4 THz. The quantum-confined Stark effect in a multiple quantum-well modulator showed a maximum cavity resonance red-shift of −2 THz in the VCSEL reflection :// The procedure for multidepth injections is as follows. Once the needle had been aligned with the guide tube (25 gauge), we lower the needle to the deepest target location (typically 8 to 9 mm in the lateral intraparietal area (LIP)). We start the injection from the deepest site, and then retract to Integrated polymer polarization rotator based on tilted laser ablation Paper Development of sol-gel saturable absorber for integrated Q-switched lasers Paper Author(s): Integrated optic current sensors operating without active quadrature bias feedback control Paper @article{osti_, title = {Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance}, author = {Bardella, Paolo and Chow, Weng and Montrosset, Ivo}, abstractNote = {In the last decades, various solutions have been proposed to increase the modulation bandwidth and consequently the transmission bit rate of integrated